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ll rights reserved.MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
1
RF Device Data
Freescale Semiconductor
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
Optimized for broadband operation from 470 to 860 MHz. Device has an
integrated input matching network for better power distribution. These devices
are ideally suited for use in analog or digital television transmitters.
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Typical Narrowband Performance: VDD
=50Volts,IDQ
= 1400 mA,
Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF. ACPR measured
in 7.61 MHz Signal Bandwidth @
±4 MHz Offset with an Integration Bandwidth of 4 kHz.
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
ACPR
(dBc)
IRL
(dB)
DVB--T (8k OFDM)
125 Avg.
860
19.3
30.0
--60.5
-- 1 2
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Typical Pulsed Broadband Performance: VDD
=50Volts,IDQ
= 1400 mA,
Pulsed Width = 100
μsec, Duty Cycle = 10%
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
Pulsed
600 Peak
470
19.3
47.1
650
20.0
53.1
860
18.8
48.9
Features
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Capable of Handling >65:1 VSWR through all Phase Angles @ 50 Vdc,
860 MHz, DVB--T (8k OFDM) 240 Watts Avg. Output Power (3 dB Input
Overdrive from Rated Pout)
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Exceptional Efficiency for Class AB Analog or Digital Television Operation
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Full Performance across Complete UHF TV Spectrum, 470--860 MHz
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Capable of 600 Watt CW Output Power with Adequate Thermal Management
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Integrated Input Matching
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Extended Negative Gate--Source
Voltage Range of --6.0 V to +10 V
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Improves Class C Performance, e.g. in a Doherty Peaking Stage
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Enables Fast, Easy and Complete Shutdown of the Amplifier
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Characterized from 20 V to 50 V for Extended Operating Range for use
with Drain Modulation
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Excellent Thermal Characteristics
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RoHS Compliant
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In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +130
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
1052
5.26
W
W/°C
Operating Junction Temperature
(1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software &
Tools/Development Tools/Calculators to access MTTF calculators by product.
Document Number: MRFE6VP8600H
Rev. 1, 9/2011
Freescale Semiconductor
Technical Data
470--860 MHz, 600 W, 50 V
LDMOS BROADBAND
RF POWER TRANSISTORS
MRFE6VP8600HR6
MRFE6VP8600HR5
MRFE6VP8600HSR6
MRFE6VP8600HSR5
CASE 375D--05, STYLE 1
NI--1230
MRFE6VP8600HR6
CASE 375E--04, STYLE 1
NI--1230S
MRFE6VP8600HSR6
PARTS ARE PUSH--PULL
Figure 1. Pin Connections
(Top View)
Gate 1
31Drain 1
Gate 2
42Drain 2
Note: The backside of the package is the
source terminal for the transistor.
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Freescale Semiconductor, Inc., 2011.
A
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